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| CHA5051 RoHS COMPLIANT 7-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5051 is a high gain three-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.15m gate length, via holes through the substrate. It is available in chip form Gain & Return Losses (dB) 30 25 Gain & Return Losses (dB) 20 15 10 5 0 -5 -10 -15 -20 0 5 10 15 Freq (GHz) 20 25 30 S21 (dB) S11 (dB) S22 (dB) Main Features Broadband performance 7-16GHz 25dB gain & 3dB noise figure RF ports ESD protected (see page 12) 25dBm output power @ 1dB compression DC power consumption, 310mA @ 4.5V Chip size 2.41 x 1.5 x 0.10mm Typical on wafer measurement Main Characteristics Tamb.=25 Vd=4.5V C, Symbol Fop Parameter Operating frequency range Small signal gain Noise figure Output power at 1dB gain compression Bias current Min 7 Typ Max 16 Unit GHz dB dB dBm mA G NF P1dB Id 25 3 25 310 ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref : DSCHA50517152 - 01 Jun 07 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0 ) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 Electrical Characteristics Tamb.=25 Vd=4.5V Id=310mA C, Symbol Fop G P1dB P03 NF VSWRin 7-16GHz Medium Power Amplifier Parameter Operating frequency range Small signal gain Pulsed output power at 1dB compression Output power at 3dB gain compression Noise Figure Input VSWR Min 7 Typ Max 16 Unit GHz dB dBm dBm dB 25 25 26 3 2.5:1 2:1 33 29 4.5 310 VSWRout Output VSWR IP3 Output IP3 from 7 to 13GHz from 14 to 16GHz Vd Id DC voltage Bias current dBm V mA These values are representative for on-wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings Tamb. = 25 (1) C Symbol Vd Id Vg Pin Tch Ta Tstg Parameter Maximum Drain bias voltage Drain bias current with Vd=4.5V Gate bias voltage Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values +5 390 -2 to +0.4 +10 +175 -40 to +85 -55 to +125 Unit V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA50517152 - 01 Jun 07 2/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 7-16GHz Medium Power Amplifier Typical Measured Performance On wafer measurement (without bonding wires at the RF ports) Tamb.=+25 Vd=+4.5V Id=310mA C, CHA5051 Gain & Return Losses versus frequency 30 25 Gain & Return Losses (dB) 20 15 10 5 0 -5 -10 -15 -20 0 5 10 15 Frequency (GHz) 20 25 30 S21 (dB) S11 (dB) S22 (dB) Noise figure versus frequency (dB) 10 9 8 7 NF (dB) 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) NF (dB) Ref: : DSCHA50517152 - 01 Jun 07 3/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 7-16GHz Medium Power Amplifier Gain & Pout versus Pin @ 10 GHz 30 28 26 Gain (dB) & Pout (dBm) 24 22 20 18 16 14 12 10 8 6 -20 -18 -16 -14 -12 -10 -8 -6 -4 Pin (dBm) -2 0 2 4 6 Gain (dB) 10 GHz Pout (dBm) 10 GHz Gain & Pout versus Pin@ 14 GHz 30 28 26 Gain (dB) & Pout (dBm) 24 22 20 18 16 14 12 10 8 6 -20 -18 -16 -14 -12 -10 -8 -6 -4 Pin (dBm) -2 0 2 4 6 Gain (dB) 14 GHz Pout (dBm) 14 GHz Ref. : DSCHA50517152 - 01 Jun 07 4/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 7-16GHz Medium Power Amplifier Typical Chip on wafer Sij parameters Tamb.=+25 Vd1=+4.5V, Id=310mA C, CHA5051 Freq (GHz) dB(S11) P(S11) ( dB(S21) P(S21) ( dB(S12) P(S12) ( dB(S22) P(S22) ( ) ) ) ) 1,0 -1,4 118 -57,3 -37 -55,8 -122 -1,4 117 2,0 -1,1 65 -40,7 -48 -62,5 124 -1,3 57 3,0 -0,9 19 -11,2 -137 -81,2 167 -2,3 -0 4,0 -1,1 -25 3,2 111 -58,6 -18 -3,1 -46 5,0 -3,1 -81 18,3 4 -57,6 127 -9,9 -56 6,0 -14,3 -148 25,1 -108 -63,9 -162 -10,3 -77 7,0 -16,5 -11 27,1 154 -60,3 30 -11,4 -93 8,0 -11,3 -45 27,5 72 -62,5 108 -12,1 -117 9,0 -10,5 -72 27,3 2 -60,1 -155 -13,8 -140 10,0 -10,9 -92 26,7 -60 -53,2 -84 -17,4 -161 11,0 -9,5 -113 26,5 -116 -47,5 -113 -18,6 -174 12,0 -8,3 -151 26,7 -174 -47,0 -159 -17,1 145 13,0 -8,7 160 26,1 123 -43,6 170 -14,2 86 14,0 -10,5 116 24,5 71 -37,5 149 -11,8 25 15,0 -11,4 92 24,5 20 -41,4 103 -10,9 -15 16,0 -8,5 79 25,5 -44 -39,2 79 -14,1 -55 17,0 -5,0 37 22,9 -124 -46,3 75 -13,6 -4 18,0 -4,7 4 18,4 170 -75,8 -147 -8,9 -18 19,0 -4,9 -17 13,6 112 -55,6 74 -6,1 -32 20,0 -5,1 -35 8,3 58 -52,8 29 -4,1 -49 21,0 -4,9 -50 2,6 10 -48,1 168 -2,7 -67 22,0 -4,8 -65 -3,2 -32 -47,3 150 -2,1 -85 23,0 -4,8 -80 -9,3 -72 -44,7 117 -2,4 -100 24,0 -4,9 -92 -15,4 -104 -47,0 107 -2,0 -109 25,0 -4,9 -104 -21,5 -132 -55,8 55 -2,0 -121 26,0 -4,6 -120 -26,7 -164 -50,9 170 -2,3 -134 Ref: : DSCHA50517152 - 01 Jun 07 5/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 7-16GHz Medium Power Amplifier Typical Measured Performance in test fixture Vd1=+4.5V, Id=310mA Ref. : DSCHA50517152 - 01 Jun 07 6/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 7-16GHz Medium Power Amplifier CHA5051 Ref: : DSCHA50517152 - 01 Jun 07 7/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 7-16GHz Medium Power Amplifier Ref. : DSCHA50517152 - 01 Jun 07 8/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 7-16GHz Medium Power Amplifier CHA5051 Ref: : DSCHA50517152 - 01 Jun 07 9/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 7-16GHz Medium Power Amplifier Ref. : DSCHA50517152 - 01 Jun 07 10/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 7-16GHz Medium Power Amplifier CHA5051 Ref: : DSCHA50517152 - 01 Jun 07 11/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 7-16GHz Medium Power Amplifier Associated return losses Note Due to ESD protection circuits on RF input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Ref. : DSCHA50517152 - 01 Jun 07 12/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 7-16GHz Medium Power Amplifier Chip Assembly and Mechanical Data CHA5051 Note : 25m diameter gold wire is to be prefered. DC Pad size : 100/100m . RF wire bondings should be as short as possible, lower than 0.35mm. Chip thickness : 100m. To Vd DC Drain supply 10nF 120pF 120pF To Vg DC Gate supply 10nF Ref: : DSCHA50517152 - 01 Jun 07 13/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5051 7-16GHz Medium Power Amplifier Ordering Information Chip form: CHA5051-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA50517152 - 01 Jun 07 14/14 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 |
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